IRFZ34N v dss = 55v r ds(on) = 0.040 w i d = 26a the to-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. the low thermal resistance and low package cost of the to-220 contribute to its wide acceptance throughout the industry. description absolute maximum ratings parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 26 i d @ t c = 100c continuous drain current, v gs @ 10v 18 a i dm pulsed drain current 100 p d @t c = 25c power dissipation 56 w linear derating factor 0.37 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 110 mj i ar avalanche current 16 a e ar repetitive avalanche energy 5.6 mj dv/dt peak diode recovery dv/dt 4.6 v/ns t j operating junction and -55 to + 175 t stg storage temperature range c soldering temperature, for 10 seconds 300 (1.6mm from case) mounting torque, 6-32 or m3 screw. 10 lbf?in (1.1n?m) thermal resistance parameter min. typ. max. units r q jc junction-to-case ???? ???? 2.7 r q cs case-to-sink, flat, greased surface ???? 0.50 ???? c/w r q ja junction-to-ambient ???? ???? 62 advanced process technology dynamic dv/dt rating 175c operating temperature fast switching fully avalanche rated to-220ab 2014-8-9 1 www.kersemi.com
IRFZ34N notes: parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) showing the i sm pulsed source current integral reverse (body diode) p-n junction diode. v sd diode forward voltage ??? ??? 1.6 v t j = 25c, i s = 16a, v gs = 0v t rr reverse recovery time ??? 57 86 ns t j = 25c, i f = 16a q rr reverse recovery charge ??? 130 200 nc di/dt = 100a/s t on forward turn-on time repetitive rating; pulse width limited by max. junction temperature. ( see fig. 11 ) v dd = 25v, starting t j = 25c, l = 610h r g = 25 w , i as = 16a. (see figure 12) i sd 16 a, di/dt 420a/s, v dd v (br)dss , t j 175c pulse width 300s; duty cycle 2%. source-drain ratings and characteristics electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 55 ??? ??? v v gs = 0v, i d = 250a d v (br)dss / d t j breakdown voltage temp. coefficient ??? 0.052 ??? v/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance ??? ??? 0.040 w v gs = 10v, i d = 16a v gs(th) gate threshold voltage 2.0 ??? 4.0 v v ds = v gs , i d = 250a g fs forward transconductance 6.5 ??? ??? s v ds = 25v , i d = 16a ??? ??? 25 v ds = 55v , v gs = 0v ??? ??? 250 v ds = 44v , v gs = 0v, t j = 150c gate-to-source forward leakage ??? ??? 100 v gs = 20v gate-to-source reverse leakage ??? ??? -100 v gs = -20v q g total gate charge ??? ??? 34 i d = 16a q gs gate-to-source charge ??? ??? 6.8 nc v ds = 44v q gd gate-to-drain ("miller") charge ??? ??? 14 v gs = 10v, see fig. 6 and 13 t d(on) turn-on delay time ??? 7.0 ??? v dd = 28v t r rise time ??? 49 ??? i d = 16a t d(off) turn-off delay time ??? 31 ??? r g = 18 w t f fall time ??? 40 ??? r d = 1.8 w, see fig. 10 between lead, 6mm (0.25in.) from package and center of die contact c iss input capacitance ??? 700 ??? v gs = 0v c oss output capacitance ??? 240 ??? pf v ds = 25v c rss reverse transfer capacitance ??? 100 ??? ? = 1.0mhz, see fig. 5 intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) ??? ??? 100 ??? ??? 26 a nh l d internal drain inductance ??? 4.5 ??? l s internal source inductance ??? 7.5 ??? i dss drain-to-source leakage current i gss ns a na 2014-8-9 2 www.kersemi.com
fig 3. typical transfer characteristics fig 4. normalized on-resistance vs. temperature fig 1. typical output characteristics, t c = 25 o c fig 2. typical output characteristics, t c = 175 o c 1 10 100 1000 0.1 1 10 100 i , d r a i n - t o - s o u r c e c u r r e n t ( a ) d v , d r a i n - t o - s o u r c e v o l t a g e ( v ) d s v g s t o p 1 5 v 1 0 v 8 . 0 v 7 . 0 v 6 . 0 v 5 . 5 v 5 . 0 v b o t t o m 4 . 5 v 2 0 s p u l s e w i d t h ? t = 2 5 c c a 4 . 5 v 1 10 100 1000 0.1 1 10 100 i , d r a i n - t o - s o u r c e c u r r e n t ( a ) d v , d r a i n - t o - s o u r c e v o l t a g e ( v ) d s v g s t o p 1 5 v 1 0 v 8 . 0 v 7 . 0 v 6 . 0 v 5 . 5 v 5 . 0 v b o t t o m 4 . 5 v a 4 . 5 v 2 0 s p u l s e w i d t h ? t = 1 7 5 c c 1 10 100 4 5 6 7 8 9 10 t = 2 5 c j g s v , g a t e - t o - s o u r c e v o l t a g e ( v ) d i , d r a i n - t o - s o u r c e c u r r e n t ( a ) a v = 2 5 v 2 0 s p u l s e w i d t h ? t = 1 7 5 c j d s 0.0 0.4 0.8 1.2 1.6 2.0 2.4 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 j t , j u n c t i o n t e m p e r a t u r e ( c ) r , d r a i n - t o - s o u r c e o n r e s i s t a n c e d s ( o n ) ( n o r m a l i z e d ) v = 1 0 v ? g s a ? i = 2 6 a d IRFZ34N 2014-8-9 3 www.kersemi.com
fig 7. typical source-drain diode forward voltage fig 8. maximum safe operating area fig 5. typical capacitance vs. drain-to-source voltage fig 6. typical gate charge vs. gate-to-source voltage 0 200 400 600 800 1000 1200 1 10 100 c , c a p a c i t a n c e ( p f ) d s v , d r a i n - t o - s o u r c e v o l t a g e ( v ) a v = 0 v , f = 1 m h z c = c + c , c s h o r t e d c = c c = c + c g s i s s g s g d d s r s s g d o s s d s g d c ? i s s c ? o s s c ? r s s 0 4 8 12 16 20 0 10 20 30 40 q , t o t a l g a t e c h a r g e ( n c ) g v , g a t e - t o - s o u r c e v o l t a g e ( v ) g s a f o r t e s t c i r c u i t ? s e e f i g u r e 1 3 ? v = 4 4 v ? v = 2 8 v d s d s i = 1 6 a d 1 10 100 1000 0.4 0.8 1.2 1.6 2.0 t = 2 5 c j v = 0 v ? g s v , s o u r c e - t o - d r a i n v o l t a g e ( v ) i , r e v e r s e d r a i n c u r r e n t ( a ) s d s d a t = 1 7 5 c j 1 10 100 1000 1 10 100 v , d r a i n - t o - s o u r c e v o l t a g e ( v ) d s i , d r a i n c u r r e n t ( a ) o p e r a t i o n i n t h i s a r e a l i m i t e d b y r d d s ( o n ) 1 0 s 1 0 0 s 1 m s 1 0 m s a ? t = 2 5 c ? t = 1 7 5 c s i n g l e p u l s e c j IRFZ34N 2014-8-9 4 www.kersemi.com
fig 10a. switching time test circuit v ds 10 v pulse width 1 s duty factor 0.1 % fig 9. maximum drain current vs. case temperature fig 10b. switching time waveforms r d v gs v dd r g d.u.t. fig 11. maximum effective transient thermal impedance, junction-to-case 0 5 10 15 20 25 30 25 50 75 100 125 150 175 c i , d r a i n c u r r e n t ( a m p s ) d t , c a s e t e m p e r a t u r e ( c ) a 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 t , r e c t a n g u l a r p u l s e d u r a t i o n ( s e c ) 1 t h j c d = 0 . 5 0 0 . 0 1 0 . 0 2 0 . 0 5 0 . 1 0 0 . 2 0 s i n g l e p u l s e ( t h e r m a l r e s p o n s e ) a t h e r m a l r e s p o n s e ( z ) p t 2 1 t d m n o t e s : ? 1 . d u t y f a c t o r d = t / t 2 . p e a k t = p x z + t ? ? ? ? 1 2 j d m t h j c c ? ? ? IRFZ34N 2014-8-9 5 www.kersemi.com
fig 12c. maximum avalanche energy vs. drain current fig 12a. unclamped inductive test circuit fig 12b. unclamped inductive waveforms fig 13a. basic gate charge waveform fig 13b. gate charge test circuit 10 v 10 v 0 50 100 150 200 250 25 50 75 100 125 150 175 j e , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) a s a s t a r t i n g t , j u n c t i o n t e m p e r a t u r e ( c ) v = 2 5 v i t o p 6 . 5 a 1 1 a b o t t o m 1 6 a d d d IRFZ34N 2014-8-9 6 www.kersemi.com
fig 14. for n-channel hexfets * vgs = 5v for logic level devices peak diode recovery dv/dt test circuit r g v dd dv/dt controlled by r g driver same type as d.u.t. i sd controlled by duty factor "d" d.u.t. - device under test d.u.t circuit layout considerations low stray inductance ground plane low leakage inductance current transformer * IRFZ34N 2014-8-9 7 www.kersemi.com
package outline to-220ab outline dimensions are shown in millimeters (inches) to-220ab part marking information l e a d a s s i g n m e n t s 1 - g a t e 2 - d r a i n 3 - s o u r c e 4 - d r a i n - b - 1 . 3 2 ( . 0 5 2 ) 1 . 2 2 ( . 0 4 8 ) 3 x 0 . 5 5 ( . 0 2 2 ) 0 . 4 6 ( . 0 1 8 ) 2 . 9 2 ( . 1 1 5 ) 2 . 6 4 ( . 1 0 4 ) 4 . 6 9 ( . 1 8 5 ) 4 . 2 0 ( . 1 6 5 ) 3 x 0 . 9 3 ( . 0 3 7 ) 0 . 6 9 ( . 0 2 7 ) 4 . 0 6 ( . 1 6 0 ) 3 . 5 5 ( . 1 4 0 ) 1 . 1 5 ( . 0 4 5 ) m i n 6 . 4 7 ( . 2 5 5 ) 6 . 1 0 ( . 2 4 0 ) 3 . 7 8 ( . 1 4 9 ) 3 . 5 4 ( . 1 3 9 ) - a - 1 0 . 5 4 ( . 4 1 5 ) 1 0 . 2 9 ( . 4 0 5 ) 2 . 8 7 ( . 1 1 3 ) 2 . 6 2 ( . 1 0 3 ) 1 5 . 2 4 ( . 6 0 0 ) 1 4 . 8 4 ( . 5 8 4 ) 1 4 . 0 9 ( . 5 5 5 ) 1 3 . 4 7 ( . 5 3 0 ) 3 x 1 . 4 0 ( . 0 5 5 ) 1 . 1 5 ( . 0 4 5 ) 2 . 5 4 ( . 1 0 0 ) 2 x 0 . 3 6 ( . 0 1 4 ) m b a m 4 1 2 3 n o t e s : 1 d i m e n s i o n i n g & t o l e r a n c i n g p e r a n s i y 1 4 . 5 m , 1 9 8 2 . 3 o u t l i n e c o n f o r m s t o j e d e c o u t l i n e t o - 2 2 0 a b . 2 c o n t r o l l i n g d i m e n s i o n : i n c h 4 h e a t s i n k & l e a d m e a s u r e m e n t s d o n o t i n c l u d e b u r r s . p a r t n u m b e r i n t e r n a t i o n a l r e c t i f i e r l o g o e x a m p l e : t h i s i s a n i r f 1 0 1 0 w i t h a s s e m b l y l o t c o d e 9 b 1 m a s s e m b l y l o t c o d e d a t e c o d e ( y y w w ) y y = y e a r w w = w e e k 9 2 4 6 i r f 1 0 1 0 9 b 1 m a IRFZ34N 2014-8-9 8 www.kersemi.com
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